2SB1694
Collector emitter breakdown voltage (VCEO) (V): 50V.
Transistor type: PNP.
Maximum collector current (IC (max)) (A): 2.
Current amplification factor (hFE): 400.
Noise factor (dB): 0.2dB.
Collector emitter cutoff current (ICEO) (A): 50nA.
Collector Base Cut off Current (ICBO) (A): 100nA.
Cut off frequency (ft): 1.5GH.
Maximum dissipated power (Pd (max)) (W): 0.2W.
Working temperature range (℃): -55 ° C~150 ° C (TJ).
Transistor type: PNP.
Maximum collector current (IC (max)) (A): 2.
Current amplification factor (hFE): 400.
Noise factor (dB): 0.2dB.
Collector emitter cutoff current (ICEO) (A): 50nA.
Collector Base Cut off Current (ICBO) (A): 100nA.
Cut off frequency (ft): 1.5GH.
Maximum dissipated power (Pd (max)) (W): 0.2W.
Working temperature range (℃): -55 ° C~150 ° C (TJ).
4.9
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Reviews
All Reviews（3） Image/Video（0） 5 star（3）
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0/500
Score Excellent
★ ★ ★ ★ ★ 16/08/2024
Good service!
(156)
★ ★ ★ ★ ★ 23/07/2024
Good!
(982)
★ ★ ★ ★ ★ 23/07/2024
Good quality!
(982)