2SD2144STPV
Bipolar (BJT) Transistor NPN 20V 500mA 350MHz 300mW Through Hole SPT
Features
1) High DC current gain. hFE = 1200 (Typ.)
2) High emitter-base voltage. VEBO = 12V (Min.)
3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)
4.9
★ ★ ★ ★ ★
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4 star 0 (0%)
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Reviews
All Reviews(3) Image/Video(0) 5 star(3)
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Score Excellent
★ ★ ★ ★ ★ 16/08/2024
Good service!
(156)
★ ★ ★ ★ ★ 23/07/2024
Good!
(982)
★ ★ ★ ★ ★ 23/07/2024
Good quality!
(982)